UTC 4N65KL-TA3-T

UTC · FETs & Power MOSFETs · MPN 4N65KL-TA3-T

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Specifications

Gate Charge(Qg)18nC@10V
Drain to Source Voltage650V
Output Capacitance(Coss)75pF
Current - Continuous Drain(Id)4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation50W
Reverse Transfer Capacitance (Crss@Vds)10pF
RDS(on)2.8Ω@10V
Number1 N-channel
Input Capacitance(Ciss)520pF
TypeN-Channel

Technical details

650V 4A 5V 50W 2.8Ω@10V 1 N-channel N-Channel TO-220 Single FETs, MOSFETs RoHS

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