UTC 4N65KG-TC-TN3-R

UTC · FETs & Power MOSFETs · MPN 4N65KG-TC-TN3-R

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Specifications

Gate Charge(Qg)13nC@10V
Drain to Source Voltage650V
Current - Continuous Drain(Id)4A
Output Capacitance(Coss)53.8pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
RDS(on)2.2Ω@10V
Reverse Transfer Capacitance (Crss@Vds)3.2pF
Number1 N-channel
Input Capacitance(Ciss)600pF
TypeN-Channel

Technical details

N-Channel 650V 4A Surface Mount TO-252

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