UTC · FETs & Power MOSFETs · MPN 4N60L-TA3-T
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 100nC@10V |
| Drain to Source Voltage | 600V |
| Output Capacitance(Coss) | 100pF |
| Current - Continuous Drain(Id) | 4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 106W |
| Reverse Transfer Capacitance (Crss@Vds) | 50pF |
| RDS(on) | 2.5Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 670pF |
600V 4A 4V 106W 2.5Ω@10V 1 N-channel N-Channel TO-220 Single FETs, MOSFETs RoHS