UTC 4N60KG-TM3-T

UTC · FETs & Power MOSFETs · MPN 4N60KG-TM3-T

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Specifications

Gate Charge(Qg)15nC@10V
Drain to Source Voltage600V
Output Capacitance(Coss)70pF
Current - Continuous Drain(Id)4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation50W
RDS(on)2.2Ω@10V
Reverse Transfer Capacitance (Crss@Vds)8pF
Number1 N-channel
Input Capacitance(Ciss)520pF
TypeN-Channel

Technical details

N-Channel 600V 4A 50W Through Hole TO-251

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