UTC 4N60G-TN3-R

UTC · FETs & Power MOSFETs · MPN 4N60G-TN3-R

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Specifications

Drain to Source Voltage600V
Gate Charge(Qg)100nC@10V
Output Capacitance(Coss)80pF
Current - Continuous Drain(Id)4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation38W
Reverse Transfer Capacitance (Crss@Vds)30pF
RDS(on)2.5Ω@10V
Number1 N-channel
Input Capacitance(Ciss)670pF
TypeN-Channel

Technical details

N-Channel 600V 4A 38W Surface Mount TO-252

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