UTC 4N50G-TN3-R

UTC · FETs & Power MOSFETs · MPN 4N50G-TN3-R

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Specifications

Gate Charge(Qg)11nC@10V
Configuration-
Drain to Source Voltage500V
Output Capacitance(Coss)65pF
Current - Continuous Drain(Id)4A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation52W
Reverse Transfer Capacitance (Crss@Vds)8pF
RDS(on)2Ω@10V
Number1 N-channel
Input Capacitance(Ciss)650pF

Technical details

N-Channel 500V 4A 52W Surface Mount TO-252

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