UTC · FETs & Power MOSFETs · MPN 4N150L-T3F-T
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| Gate Charge(Qg) | 40nC@10V |
|---|---|
| Drain to Source Voltage | 1.5kV |
| Current - Continuous Drain(Id) | 4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Pd - Power Dissipation | - |
| RDS(on) | 6.5Ω@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 17pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.31nF |
1.5kV 4A 5V 6.5Ω@10V 1 N-channel TO-3PF Single FETs, MOSFETs RoHS