UTC 4N100L-TF1-T

UTC · FETs & Power MOSFETs · MPN 4N100L-TF1-T

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Specifications

Drain to Source Voltage1kV
Current - Continuous Drain(Id)4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation38W
Reverse Transfer Capacitance (Crss@Vds)25pF
RDS(on)3.5Ω@10V
Number1 N-channel
Input Capacitance(Ciss)1.5nF

Technical details

1kV 4A 3V 38W 3.5Ω@10V 1 N-channel TO-220F1 Single FETs, MOSFETs RoHS

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