UTC 2SD882L-P-T9N-B

UTC · Transistors (BJTs) · MPN 2SD882L-P-T9N-B

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Specifications

Current - Collector Cutoff1uA
Transition frequency(fT)80MHz
Collector - Emitter Voltage VCEO30V
DC Current Gain400
Emitter-Base Voltage VEBO7V
Pd - Power Dissipation1W
Number1 NPN
typeNPN
Current - Collector(Ic)3A
Vce Saturation(VCE(sat))500mV

Technical details

Bipolar (BJT) Transistor NPN 30V 3A 1W Through Hole TO-92-3

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