UTC 2SD1060G-S-AB3-R

UTC · Transistors (BJTs) · MPN 2SD1060G-S-AB3-R

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Specifications

Current - Collector Cutoff100uA
Transition frequency(fT)30MHz
Collector - Emitter Voltage VCEO30V
Emitter-Base Voltage VEBO6V
DC Current Gain360
Pd - Power Dissipation2W
Number1 NPN
typeNPN
Current - Collector(Ic)5A
Vce Saturation(VCE(sat))400mV

Technical details

Bipolar (BJT) Transistor NPN 30V 5A 30MHz 2W Surface Mount SOT-89

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