UTC 2SC2712G-G-AE3-R

UTC · Transistors (BJTs) · MPN 2SC2712G-G-AE3-R

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)80MHz
Collector - Emitter Voltage VCEO50V
Emitter-Base Voltage VEBO5V
DC Current Gain200
Pd - Power Dissipation625mW
Number1 NPN
typeNPN
Current - Collector(Ic)150mA
Operating Temperature-
Vce Saturation(VCE(sat))250mV

Technical details

Bipolar (BJT) Transistor NPN 50V 150mA 80MHz 625mW Surface Mount SOT-23

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