UTC 2SC2655G-Y-AE3-R

UTC · Transistors (BJTs) · MPN 2SC2655G-Y-AE3-R

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Specifications

Current - Collector Cutoff1uA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO50V
Emitter-Base Voltage VEBO5V
DC Current Gain120
Pd - Power Dissipation350mW
Number1 NPN
typeNPN
Current - Collector(Ic)2A
Operating Temperature-
Vce Saturation(VCE(sat))500mV

Technical details

Bipolar (BJT) Transistor NPN 50V 2A 100MHz 350mW Surface Mount SOT-23

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