UTC 2P50G-TN3-R

UTC · FETs & Power MOSFETs · MPN 2P50G-TN3-R

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Specifications

Gate Charge(Qg)11.5nC@10V
Drain to Source Voltage500V
Output Capacitance(Coss)59pF
Current - Continuous Drain(Id)2A
Operating Temperature --40℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation41W
Reverse Transfer Capacitance (Crss@Vds)9pF
RDS(on)8.5Ω@10V
Number1 P-Channel
Input Capacitance(Ciss)343pF
TypeP-Channel

Technical details

P-Channel 500V 2A 41W Surface Mount TO-252

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