UTC 2NM65G-TN3-R

UTC · FETs & Power MOSFETs · MPN 2NM65G-TN3-R

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Specifications

Drain to Source Voltage650V
Gate Charge(Qg)13nC@10V
Output Capacitance(Coss)35pF
Current - Continuous Drain(Id)2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation44W
Reverse Transfer Capacitance (Crss@Vds)2.1pF
RDS(on)2.52Ω@10V
Number1 N-channel
Input Capacitance(Ciss)156pF
TypeN-Channel

Technical details

N-Channel 650V 2A 44W Surface Mount TO-252

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