UTC 2N6718G-B-AB3-R

UTC · Transistors (BJTs) · MPN 2N6718G-B-AB3-R

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)50MHz
Collector - Emitter Voltage VCEO100V
DC Current Gain300
Emitter-Base Voltage VEBO5V
Pd - Power Dissipation1W
Number1 NPN
typeNPN
Current - Collector(Ic)1A
Vce Saturation(VCE(sat))350mV
Operating Temperature-40℃~+125℃

Technical details

100V 300 1 NPN NPN 1A SOT-89-3 Single Bipolar Transistors RoHS

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