UTC 2N60L-TA3-T

UTC · FETs & Power MOSFETs · MPN 2N60L-TA3-T

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Specifications

Configuration-
Gate Charge(Qg)50nC@10V
Drain to Source Voltage600V
Output Capacitance(Coss)50pF
Current - Continuous Drain(Id)2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation54W
Reverse Transfer Capacitance (Crss@Vds)13pF
RDS(on)5Ω@10V
Number1 N-channel
Input Capacitance(Ciss)350pF

Technical details

N-Channel 600V 2A 54W Through Hole TO-220

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