UTC · FETs & Power MOSFETs · MPN 2N60G-LC1-AA3-R
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| Drain to Source Voltage | 600V |
|---|---|
| Gate Charge(Qg) | 7nC@10V |
| Output Capacitance(Coss) | 30pF |
| Current - Continuous Drain(Id) | 2A |
| Operating Temperature - | -40℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 2.3W |
| RDS(on) | 5Ω@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 2.3pF |
| Input Capacitance(Ciss) | 285pF |
| Type | N-Channel |
600V 2A 4V 2.3W 5Ω@10V N-Channel SOT-223 Single FETs, MOSFETs RoHS