UTC · Transistors (BJTs) · MPN 2N5551G-B-AB3-R
No reviews yet — be the first to review UTC 2N5551G-B-AB3-R.
| Current - Collector Cutoff | 50nA |
|---|---|
| Transition frequency(fT) | 100MHz |
| Collector - Emitter Voltage VCEO | 160V |
| Emitter-Base Voltage VEBO | 6V |
| DC Current Gain | 150 |
| Pd - Power Dissipation | 500mW |
| Number | 1 NPN |
| type | NPN |
| Current - Collector(Ic) | 600mA |
| Operating Temperature | - |
| Vce Saturation(VCE(sat)) | 200mV |
Bipolar (BJT) Transistor NPN 160V 600mA 100MHz 500mW Surface Mount SOT-89