UTC 24NM65G-TF1-T

UTC · FETs & Power MOSFETs · MPN 24NM65G-TF1-T

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Specifications

Drain to Source Voltage650V
Gate Charge(Qg)66nC@10V
Output Capacitance(Coss)1.2nF
Current - Continuous Drain(Id)54A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation32W
Reverse Transfer Capacitance (Crss@Vds)100pF
RDS(on)160mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.98nF
TypeN-Channel

Technical details

N-Channel 650V 54A 32W Through Hole TO-220F1

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