UTC 19N10L-TN3-R

UTC · FETs & Power MOSFETs · MPN 19N10L-TN3-R

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Specifications

Configuration-
Gate Charge(Qg)25nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)215pF
Current - Continuous Drain(Id)15.6A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation50W
Reverse Transfer Capacitance (Crss@Vds)40pF
RDS(on)100mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)780pF

Technical details

N-Channel 100V 15.6A 50W Surface Mount TO-252

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