UTC 19N10L-TM3-T

UTC · FETs & Power MOSFETs · MPN 19N10L-TM3-T

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Specifications

Drain to Source Voltage100V
Current - Continuous Drain(Id)15.6A
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation50W
RDS(on)100mΩ@10V
Number1 N-channel

Technical details

100V 15.6A 4V 50W 100mΩ@10V 1 N-channel TO-251(IPAK) Single FETs, MOSFETs RoHS

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