UTC 18NM65L-TA3-T

UTC · FETs & Power MOSFETs · MPN 18NM65L-TA3-T

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Specifications

Gate Charge(Qg)44nC@10V
Drain to Source Voltage650V
Output Capacitance(Coss)134pF
Current - Continuous Drain(Id)18A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation104W
Reverse Transfer Capacitance (Crss@Vds)4.9pF
RDS(on)330mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.115nF
TypeN-Channel

Technical details

N-Channel 650V 18A 104W Through Hole TO-220

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