UTC 18N65L-TF1-T

UTC · FETs & Power MOSFETs · MPN 18N65L-TF1-T

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Specifications

Drain to Source Voltage650V
Gate Charge(Qg)60nC@10V
Output Capacitance(Coss)262pF
Current - Continuous Drain(Id)18A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation42W
RDS(on)430mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)12pF
Number1 N-channel
Input Capacitance(Ciss)3.2nF
TypeN-Channel

Technical details

N-Channel 650V 18A 42W Through Hole TO-220F1

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