UTC · FETs & Power MOSFETs · MPN 12N65L-TF1-T(CBQ)
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| Drain to Source Voltage | 650V |
|---|---|
| Configuration | - |
| Gate Charge(Qg) | 54nC@10V |
| Output Capacitance(Coss) | 270pF |
| Current - Continuous Drain(Id) | 12A |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 225W |
| Reverse Transfer Capacitance (Crss@Vds) | 35pF |
| RDS(on) | 850mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.9nF |
650V 12A 4V 225W 850mΩ@10V 1 N-channel N-Channel TO-220F1 Single FETs, MOSFETs RoHS