UTC 12N10L-TN3-R

UTC · FETs & Power MOSFETs · MPN 12N10L-TN3-R

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Specifications

Gate Charge(Qg)7.5nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)90pF
Current - Continuous Drain(Id)12A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation30W
Reverse Transfer Capacitance (Crss@Vds)20pF
RDS(on)180mΩ@10V
Number-
Input Capacitance(Ciss)430pF
TypeN-Channel

Technical details

100V 12A 3V 30W 180mΩ@10V N-Channel TO-252-2(DPAK) Single FETs, MOSFETs RoHS

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