UTC 11NM65L-TA3-T

UTC · FETs & Power MOSFETs · MPN 11NM65L-TA3-T

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Specifications

Drain to Source Voltage650V
Gate Charge(Qg)27nC@10V
Configuration-
Output Capacitance(Coss)580pF
Current - Continuous Drain(Id)11A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation30W
RDS(on)520mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)52pF
Number1 N-channel
Input Capacitance(Ciss)770pF

Technical details

N-Channel 650V 11A 30W Through Hole TO-220

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