UTC 10N90L-TF1-T

UTC · FETs & Power MOSFETs · MPN 10N90L-TF1-T

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Specifications

Gate Charge(Qg)40.5nC@10V
Drain to Source Voltage900V
Current - Continuous Drain(Id)10A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation38.5W
Reverse Transfer Capacitance (Crss@Vds)6.3pF
RDS(on)1.7Ω@10V
Number1 N-channel
Input Capacitance(Ciss)1.88nF

Technical details

900V 10A 3V 38.5W 1.7Ω@10V 1 N-channel TO-220F1 Single FETs, MOSFETs RoHS

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