UTC 10N65L-ML-TF1-T

UTC · FETs & Power MOSFETs · MPN 10N65L-ML-TF1-T

No reviews yet — be the first to review UTC 10N65L-ML-TF1-T.

Specifications

Drain to Source Voltage650V
Gate Charge(Qg)31nC@10V
Output Capacitance(Coss)124pF
Current - Continuous Drain(Id)10A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation38W
RDS(on)1Ω@10V
Reverse Transfer Capacitance (Crss@Vds)9.3pF
Number1 N-channel
Input Capacitance(Ciss)1.3nF
TypeN-Channel

Technical details

N-Channel 650V 10A 38W Through Hole TO-220F1

Related FETs & Power MOSFETs