UTC 05N30G-AE3-R

UTC · FETs & Power MOSFETs · MPN 05N30G-AE3-R

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Specifications

Gate Charge(Qg)8.5nC@10V
Drain to Source Voltage300V
Output Capacitance(Coss)20pF
Current - Continuous Drain(Id)500mA
Operating Temperature --
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation600mW
Reverse Transfer Capacitance (Crss@Vds)3.2pF
RDS(on)5Ω@10V
Number1 N-channel
Input Capacitance(Ciss)100pF
TypeN-Channel

Technical details

N-Channel 300V 0.5A 0.6W Surface Mount SOT-23

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