UTC 03N60G-AE3-R

UTC · FETs & Power MOSFETs · MPN 03N60G-AE3-R

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Specifications

Drain to Source Voltage600V
Gate Charge(Qg)7nC@10V
Output Capacitance(Coss)11pF
Current - Continuous Drain(Id)300mA
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation400mW
Reverse Transfer Capacitance (Crss@Vds)4.8pF
RDS(on)24Ω@10V
Number1 N-channel
Input Capacitance(Ciss)60pF
TypeN-Channel

Technical details

600V 300mA 4V 400mW 24Ω@10V 1 N-channel N-Channel SOT-23 Single FETs, MOSFETs RoHS

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