UMW SI2319A

UMW · FETs & Power MOSFETs · MPN SI2319A

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Specifications

Gate Charge(Qg)11.5nC@10V
Drain to Source Voltage40V
Output Capacitance(Coss)85pF
Current - Continuous Drain(Id)4.4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation1.25W
Reverse Transfer Capacitance (Crss@Vds)65pF
RDS(on)70mΩ@10V;95mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)470pF

Technical details

P-Channel 40V 4.4A 1.25W Surface Mount SOT-23

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