UMW SI2309A

UMW · FETs & Power MOSFETs · MPN SI2309A

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Specifications

Configuration-
Gate Charge(Qg)5.4nC@10V
Drain to Source Voltage60V
Current - Continuous Drain(Id)1.25A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation1.25W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)340mΩ@10V;550mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)-
TypeP-Channel

Technical details

P-Channel 60V 1.25A 1.25W Surface Mount SOT-23

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