UMW NVD5C688NLT4G(UMW)

UMW · FETs & Power MOSFETs · MPN NVD5C688NLT4G(UMW)

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Specifications

Gate Charge(Qg)7nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)170pF
Current - Continuous Drain(Id)17A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.1V
Pd - Power Dissipation18W
RDS(on)23mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)12pF
Number1 N-channel
Input Capacitance(Ciss)400pF

Technical details

60V 17A 18W Surface Mount TO-252

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