UMW NTD5867NLT4G(UMW)

UMW · FETs & Power MOSFETs · MPN NTD5867NLT4G(UMW)

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Specifications

Gate Charge(Qg)15nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)68pF
Current - Continuous Drain(Id)20A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.8V
Pd - Power Dissipation36W
Reverse Transfer Capacitance (Crss@Vds)47pF
RDS(on)26mΩ@10V;33mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)675pF
TypeN-Channel

Technical details

N-Channel 60V 20A 36W Surface Mount TO-252

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