UMW IRF540N(UMW)

UMW · FETs & Power MOSFETs · MPN IRF540N(UMW)

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Specifications

Gate Charge(Qg)55nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)225pF
Current - Continuous Drain(Id)30A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation70W
Reverse Transfer Capacitance (Crss@Vds)205pF
RDS(on)40mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.55nF
TypeN-Channel

Technical details

N-Channel 100V 30A 70W Through Hole TO-220

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