UMW IPP045N10N3G(UMW)

UMW · FETs & Power MOSFETs · MPN IPP045N10N3G(UMW)

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Specifications

Gate Charge(Qg)88nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)1.21nF
Current - Continuous Drain(Id)137A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.7V
Pd - Power Dissipation214W
Reverse Transfer Capacitance (Crss@Vds)41pF
RDS(on)3.9mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)6.32nF
TypeN-Channel

Technical details

N-Channel 100V 137A 214W Through Hole TO-220

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