UMW IPD50P04P4L11(UMW)

UMW · FETs & Power MOSFETs · MPN IPD50P04P4L11(UMW)

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Specifications

Drain to Source Voltage40V
Gate Charge(Qg)45nC@10V
Output Capacitance(Coss)1.1nF
Current - Continuous Drain(Id)50A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))1.7V
Pd - Power Dissipation58W
RDS(on)8.2mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)37pF
Number1 P-Channel
Input Capacitance(Ciss)3nF
TypeP-Channel

Technical details

P-Channel 40V 50A 58W Surface Mount TO-252

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