UMW IPD50N06S2-14(UMW)

UMW · FETs & Power MOSFETs · MPN IPD50N06S2-14(UMW)

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)52nC@10V
Output Capacitance(Coss)464pF
Current - Continuous Drain(Id)50A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation136W
Reverse Transfer Capacitance (Crss@Vds)167pF
RDS(on)14.4mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.485nF
TypeN-Channel

Technical details

N-Channel 60V 50A 136W Surface Mount TO-252

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