UMW IPD088N06N3G(UMW)

UMW · FETs & Power MOSFETs · MPN IPD088N06N3G(UMW)

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)36nC@10V
Output Capacitance(Coss)640pF
Current - Continuous Drain(Id)50A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation71W
Reverse Transfer Capacitance (Crss@Vds)23pF
RDS(on)7.1mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.9nF
Type-

Technical details

60V 50A 71W Surface Mount TO-252

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