UMW IPD068P03L3G(UMW)

UMW · FETs & Power MOSFETs · MPN IPD068P03L3G(UMW)

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)68nC@10V
Output Capacitance(Coss)2.09nF
Current - Continuous Drain(Id)70A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation100W
Reverse Transfer Capacitance (Crss@Vds)160pF
RDS(on)5mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)5.15nF
TypeP-Channel

Technical details

P-Channel 30V 70A 100W Surface Mount TO-252

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