UMW IPD050N03LGATMA1(UMW)

UMW · FETs & Power MOSFETs · MPN IPD050N03LGATMA1(UMW)

No reviews yet — be the first to review UMW IPD050N03LGATMA1(UMW).

Specifications

Gate Charge(Qg)31nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)920pF
Current - Continuous Drain(Id)50A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.2V
Pd - Power Dissipation68W
RDS(on)4.2mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)49pF
Number1 N-channel
Input Capacitance(Ciss)2.4nF
TypeN-Channel

Technical details

N-Channel 30V 50A 68W Surface Mount TO-252

Related FETs & Power MOSFETs