UMW FQD7N10LTM(UMW)

UMW · FETs & Power MOSFETs · MPN FQD7N10LTM(UMW)

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Specifications

Gate Charge(Qg)4.6nC
Drain to Source Voltage100V
Output Capacitance(Coss)55pF
Current - Continuous Drain(Id)5.8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation25W
Reverse Transfer Capacitance (Crss@Vds)12pF
RDS(on)275mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)220pF
TypeN-Channel

Technical details

N-Channel 100V 5.8A 25W Surface Mount TO-252

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