UMW · FETs & Power MOSFETs · MPN FQD7N10LTM(UMW)
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| Gate Charge(Qg) | 4.6nC |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 55pF |
| Current - Continuous Drain(Id) | 5.8A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 25W |
| Reverse Transfer Capacitance (Crss@Vds) | 12pF |
| RDS(on) | 275mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 220pF |
| Type | N-Channel |
N-Channel 100V 5.8A 25W Surface Mount TO-252