UMW · FETs & Power MOSFETs · MPN FQD19N10LTM(UMW)
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| Gate Charge(Qg) | 14nC |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 160pF |
| Current - Continuous Drain(Id) | 15.6A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 50W |
| RDS(on) | 74mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 35pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 670pF |
| Type | N-Channel |
N-Channel 100V 15.6A 50W Surface Mount TO-252