UMW FQD13N10LTM(UMW)

UMW · FETs & Power MOSFETs · MPN FQD13N10LTM(UMW)

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Specifications

Gate Charge(Qg)12nC
Drain to Source Voltage100V
Output Capacitance(Coss)95pF
Current - Continuous Drain(Id)10A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation40W
Reverse Transfer Capacitance (Crss@Vds)20pF
RDS(on)142mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)400pF

Technical details

N-Channel 100V 10A 40W Surface Mount TO-252

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