UMW FDP8D5N10C(UMW)

UMW · FETs & Power MOSFETs · MPN FDP8D5N10C(UMW)

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Specifications

Gate Charge(Qg)25nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)1.01nF
Current - Continuous Drain(Id)76A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation107W
RDS(on)7.4mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)16pF
Number1 N-channel
Input Capacitance(Ciss)1.765nF
TypeN-Channel

Technical details

N-Channel 100V 76A 107W Through Hole TO-220

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