UMW FDN5630(UMW)

UMW · FETs & Power MOSFETs · MPN FDN5630(UMW)

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)2.1nC@10V
Current - Continuous Drain(Id)4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation1.09W
RDS(on)85mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)13pF
Number1 N-channel
Input Capacitance(Ciss)180pF

Technical details

60V 4A 1.09W Surface Mount SOT-23

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