UMW FDN359AN(UMW)

UMW · FETs & Power MOSFETs · MPN FDN359AN(UMW)

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Specifications

Gate Charge(Qg)7nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)2.7A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation500mW
RDS(on)60mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)45pF
Number1 N-channel
Input Capacitance(Ciss)480pF

Technical details

N-Channel 30V 2.7A 0.5W Surface Mount SOT-23

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