UMW FDN352AP(UMW)

UMW · FETs & Power MOSFETs · MPN FDN352AP(UMW)

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Specifications

Gate Charge(Qg)1.4nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)40pF
Current - Continuous Drain(Id)1.3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation500mW
Reverse Transfer Capacitance (Crss@Vds)20pF
RDS(on)150mΩ@10V;250mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)150pF

Technical details

P-Channel 30V 1.3A 0.5W Surface Mount SOT-23

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