UMW FDN338P(UMW)

UMW · FETs & Power MOSFETs · MPN FDN338P(UMW)

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Specifications

Gate Charge(Qg)5.5nC@2.5V
Drain to Source Voltage20V
Output Capacitance(Coss)75pF
Current - Continuous Drain(Id)2.8A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation400mW
Reverse Transfer Capacitance (Crss@Vds)55pF
RDS(on)90mΩ@4.5V;110mΩ@2.5V
Number1 P-Channel
Input Capacitance(Ciss)405pF
TypeP-Channel

Technical details

P-Channel 20V 2.8A 400mW Surface Mount SOT-23

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