UMW FDN306P(UMW)

UMW · FETs & Power MOSFETs · MPN FDN306P(UMW)

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Specifications

Gate Charge(Qg)12nC@4.5V
Drain to Source Voltage12V
Output Capacitance(Coss)454pF
Current - Continuous Drain(Id)2.6A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))600mV
Pd - Power Dissipation500mW
RDS(on)30mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)302pF
Number1 P-Channel
Input Capacitance(Ciss)1.138nF
TypeP-Channel

Technical details

P-Channel 12V 2.6A 500mW Surface Mount SOT-23

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